Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 452-457

  Taishi, Toshinori ^a   Hoshikawa, Takeshi ^a   Yamatani, Muneyoshi ^b   Shirasawa, Katsuhiko ^b   Huang, Xinming ^a   Uda, Satoshi ^a   Hoshikawa, Keigo ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b KYOCERA CORPORATION   (Japan)

^c SHINSHU UNIVERSITY   (Japan)

Author keywords

A1. Defects; A1. Impurities; A2. Czochralski method; A2. Multicrystal growth; B2. Silicon; B3. Solar cells

Indexed keywords

GRAIN BOUNDARIES; SILICA; SINGLE CRYSTALS; SOLAR CELLS;

HIGH DENSITY DISLOCATIONS; MINORITY CARRIER LIFETIME; MULTICRYSTAL GROWTH; SILICA CRUCIBLES;

CRYSTAL GROWTH FROM MELT;

EID: 34547820228     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.042     Document Type: Article

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