Gettering effect of aluminium in mc-Si and c-Si wafers and in solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 629-632

  Porre, Olivier ^a   Martinuzzi, Santo ^a   Pasquinelli, Marcel ^a   Perichaud, Isabelle ^a   Gay, Nathalie ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; DIFFUSION; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; IMPURITIES; PHOSPHORUS; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

CRYSTALLOGRAPHIC DEFECTS; ELECTRON GUN EVAPORATION; GETTERING EFFECT; METALLIC IMPURITIES; NEAR INFRARED LIGHT; PHOSPHORUS DIFFUSION; THICK ALUMINUM LAYER;

SOLAR CELLS;

EID: 0030393520     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.564207     Document Type: Conference Paper

References (10)