Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 402-407

  Buonassisi, T ^a   Istratov, A A ^a   Pickett, M D ^a   Rakotoniaina, J P ^b   Breitenstein, O ^b   Marcus, M A ^c   Heald, S M ^d   Weber, E R ^a  

^a University of California Berkeley   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

A1. Defects; A1. Impurities; A2. Directional solidification; B1. Nitrides; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CRUCIBLES; IMPURITIES; NITRIDES; SEMICONDUCTING SILICON; SOLAR CELLS; SOLIDIFICATION;

COST-EFFECTIVE SOLAR CELL WAFER PRODUCTION; PHOTOVOLTAIC-GRADE INGOT-CAST MULTICRYSTALLINE SILICON; SILICON NITRIDE CRUCIBLE LINING MATERIAL; SYNCHROTRON-BASED ANALYTICAL MICROPROBE TECHNIQUES;

PHOTOVOLTAIC CELLS;

EID: 30344435616     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.053     Document Type: Conference Paper

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