Characterization and analysis of the temperature-dependent on -resistance in AlGaN/GaN lateral field-effect rectifiers

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1924-1929

  Wong, King Yuen ^a   Chen, Wanjun ^a,b   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

ALGAN GAN; lateral field effect rectifier (L FER); parameter extraction; semiconductor device modeling; thermal resistance

Indexed keywords

ALGAN/GAN; FIELD-EFFECT; LATERAL FIELD-EFFECT RECTIFIER (L-FER); SEMICONDUCTOR DEVICE MODELING; THERMAL RESISTANCE;

ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PARAMETER EXTRACTION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; TEMPERATURE DISTRIBUTION;

ELECTRIC RECTIFIERS;

EID: 77955160327     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051245     Document Type: Article

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