Growth and characterization of free-standing zinc-blende GaN layers and substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1277-1282

  Novikov, S V ^a   Foxon, C T ^a   Kent, A J ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

GaN; Growth; MBE; Structure

Indexed keywords

BASIC PARAMETERS; BULK CRYSTAL GROWTH; DROPLET FORMATION; GA-RICH CONDITIONS; GAAS SUBSTRATES; GAN GROWTH; GAN LAYERS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ZINC-BLENDE;

CRYSTAL GROWTH; DROP FORMATION; GALLIUM NITRIDE; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ZINC;

GALLIUM ALLOYS;

EID: 77954260430     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983412     Document Type: Article

References (24)

1. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, J. Phys.: Condens. Matter 14, 3399 (2002).
2. P. Waltereit, O. Brandt, M. Ramsteiner, R. Uecker, P. Reiche, and K. H. Ploog, J. Cryst. Growth 218, 143 (2000).
3. S. Tripathy, R. K. Soni, H. Asahi, K. Iwata, R. Kuroiwa, K. Asami, and S. Gonda, J. Appl. Phys. 85, 8386 (1999).
4. B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 1554 (2003).
5. L. Shunfeng, J. Schomann, D. J. As, and K. Lischka, Appl. Phys. Lett. 90, 071903 (2007).
6. D. J. As, D. Schikora, A. Greiner, M. Lubbers, J. Mimkes, and K. Lischka, Phys. Rev. B 54, R11118 (1996).
7. K. T. Delaney, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 94, 191109 (2009).
8. H. Tsuchiya, K. Sunaba, T. Suemasu, and F. Hasegawa, J. Cryst. Growth 198/199, 1056 (1999).
9. S. V. Novikov, N. M. Stanton, R. P. Campion, R. D. Morris, H. L. Geen, C. T. Foxon, and A. J. Kent, Semicond. Sci. Technol. 23, 015018 (2008).
10. C. T. Foxon, S. V. Novikov, N. M. Stanton, R. P. Campion, and A. J. Kent, Phys. Status Solidi B 245, 890 (2008).
11. S. V. Novikov, N. M. Stanton, R. P. Campion, C. T. Foxon, and A. J. Kent, J. Cryst. Growth 310, 3964 (2008).
12. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000).
13. S. V. Novikov, N. Zainal, A. V. Akimov, C. R. Staddon, A. J. Kent, and C. T. Foxon, J. Vac. Sci. Technol. B 28, C3B1 (2010).
14. H. Yaguchi, J. Wu, H. Akiyama, M. Baba, K. Onabe, and Y. Shiraki, Phys. Status Solidi B 216, 237 (1999).
15. A. Philippe, C. Bru-Chevallier, M. Vernay, G. Guillot, J. Hubner, B. Daudin, and G. Feuillet, Mater. Sci. Eng. B 59, 168 (1999).
16. K. Lischka Brazilian J. Phys. 27, 80 (1997).
17. J. Wu, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki, Appl. Phys. Lett. 71, 2067 (1997).
18. I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, and S. Porowski, Acta Phys. Pol. A 100, 57 (2001).
19. C. T. Foxon, R. P. Campion, V. A. Grant, S. V. Novikov, J. J. Harris, R. Thomson, C. Taylor, and D. Barlett, J. Cryst. Growth 301/302, 482, (2007).
20. S. V. Novikov, N. Zainal, C. T. Foxon, A. J. Kent, F. Luckert, P. R. Edwards, and R. W. Martin, Phys. Status Solidi C, accepted.
21. S. V. Novikov, N. Zainal, A. V. Akimov, C. R. Staddon, C. T. Foxon, A. J. Kent, D. P. Nicholls, and S. E. Hooper, in: Proc. ICNS-8 (2009).
22. R. Tycko, Solid State NMR 11, 1 (1998).
23. R. D. Morris, A. J. Kent, H. L. Geen, C. T. Foxon, and S. V. Novikov, AIP Conf. Proc. 893, 1343 (2007).
24. D. Moss, A. V. Akimov, S. V. Novikov, R. P. Campion, C. R. Staddon, N. Zainal, C. T. Foxon, and A. J. Kent, J. Phys. D: Appl. Phys. 42, 115412 (2009).