Use of band-gap thermometry to investigate the growth of GaN on sapphire and GaAs

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 482-485

  Foxon, C T ^a   Campion, R P ^a   Grant, V A ^a   Novikov, S V ^a   Harris, J J ^b   Thomson, R ^b   Taylor, C ^c   Barlett, D ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b RTA Instruments   (United Kingdom)

^c k Space Associates Inc   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ABSORPTION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SAPPHIRE; THERMOMETERS;

INFRARED WAVELENGTHS; OPTICAL MEASUREMENTS; SEMICONDUCTING III-V MATERIALS; SUBSTRATE TEMPERATURES;

ENERGY GAP;

EID: 33947384984     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.283     Document Type: Article

References (5)

1. Foxon C.T., Cheng T.S., Novikov S.V., Jeffs N.J., Hughes O.H., Melnik Y.V., Nikolaev A.E., and Dmitriev V.A. Surf. Sci. 421 (1999) 377
2. Smith R., Ramachandran V., Feenstra R.M., Greve D.W., Ptak A., Myers T., Sarney W., Salamanca-Riba L., Shin M., and Skowronski M. MRS I'net J Nitride Semicond. Res. 3 (1998) 12
3. Sacks R.N., Barlett D., Taylor II C.A., and Williams J. J. Vac. Sci. Technol. B 23 (2005) 1247
4. J.J. Harris, R. Thomson, C. Taylor, D. Barlett, R.P. Campion, V.A. Grant, C.T. Foxon, M.J. Kappers, J. Cryst. Growth (2006), doi:10.1016/j.jcrysgro.2006.11.012.
5. Land Instruments International, 10 Friends Lane, Newtown, PA 18940-1804, USA.