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Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates

(6) Novikov, S V a Zainal, N a Akimov, A V a Staddon, C R a Kent, A J a Foxon, C T a

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SUBSTRATES; ZINC; ZINC SULFIDE;

DROPLET FORMATION; GA-RICH CONDITIONS; GAN LAYERS; GAN SUBSTRATE; MOLECULAR-BEAM EPITAXY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLYTYPES; PURE ZINC; ZINC BLENDE; ZINC-BLENDE GAN;

MOLECULAR BEAM EPITAXY;

EID: 77952985529 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3276426 Document Type: Conference Paper

Times cited : (31)

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