Three- to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 24, 2009, Pages

  Laubsch, A ^a,b   Urban, K ^a   Ebert, Ph ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77951583883     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.245314     Document Type: Article

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