Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor

Applied Physics Letters

Volumn 91, Issue 4, 2007, Pages

  Burhanudin, Zainal A ^a   Nuryadi, Ratno ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; IONIZATION; SILICON WAFERS; TRANSISTORS;

SINGLE HOLE TUNNELING TRANSISTORS; VERTICAL ELECTRIC FIELDS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34547453840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2762278     Document Type: Article

References (15)

1. G. Roy, A. R. Brown, F. Adamu-Lema, S. Roy, and A. Asenov, IEEE Trans. Electron Devices 53, 3063 (2006).
2. Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa, Mater. Res. Soc. Symp. Proc. 864, 122 (2005).
3. B. E. Kane, Nature (London) 393, 133 (1998).
4. L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly, G. J. Milburn, and R. G. Clark, Phys. Rev. B 69, 113301 (2004).
5. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, Phys. Rev. Lett. 97, 206805 (2006).
6. M. J. Calderon, B. Koiller, X. Hu, and S. Das Sarma, Phys. Rev. Lett. 96, 096802 (2006).
7. Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 90, 102106 (2007).
8. L. E. Calvet, R. G. Wheeler, and M. A. Reed, Phys. Rev. Lett. 98, 096805 (2007).
9. Y. Ishikawa, S. Makita, J. Zhang, T. Tsuchiya, and M. Tabe, Jpn. J. Appl. Phys., Part 2 38, L789 (1999).
10. R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, IEEE Trans. Nanotechnol. 2, 231 (2003).
11. K. Uchida, J. Koga, R. Ohba, S. Takagi, and A. Toriumi, J. Appl. Phys. 90, 3551 (2001).
12. S. K. Tewksbury, J. Appl. Phys. 53, 3865 (1982).
13. N. S. Saks and A. Nordbryhn, J. Appl. Phys. 50, 6962 (1979).
14. E. Rosencher, V. Mosser, and G. Vincent, Phys. Rev. B 29, 1135 (1984).
15. D. P. Foty, Cryogenics 30, 1056 (1990).