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Applied Physics Letters

Volumn 95, Issue 7, 2009, Pages

Origin of nanoscale potential fluctuations in two-dimensional semiconductors

(6) Landrock, S a Jiang, Y a,b Wu, K H b Wang, E G b Urban, K a Ebert, Ph a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT DISTRIBUTION; INHOMOGENEITIES; LOCAL DISTRIBUTIONS; NANO SCALE; NANO-METER SCALE; POTENTIAL FLUCTUATIONS; QUANTITATIVE ANALYSIS; SI (1 1 1); TWO-REGIME;

ELECTRON-ELECTRON INTERACTIONS; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; TWO DIMENSIONAL;

SEMICONDUCTING SILICON;

EID: 69249195802 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3177329 Document Type: Article

Times cited : (20)

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