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Volumn , Issue , 2009, Pages 241-244

Bulk-Si FinFET technology for ultra-high aspect-ratio devices

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE PARTS; ANALOG APPLICATIONS; BULK SILICON; CURRENT CONDUCTION; FIN WIDTHS; FINFETS; HIGH FREQUENCY HF; N-CHANNEL; SILICON AREA; SURFACE ORIENTATION; ULTRA-HIGH;

EID: 72849121250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331554     Document Type: Conference Paper
Times cited : (3)

References (8)
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    • T. Skotnicki et aI., " Innovative materials, devices, and CMOS technologies for low-power mobile multimedia", IEEE Trans. Electron Devices , vol. 55, January 2008, pp. 96-130
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    • Skotnicki, T.1    aI2
  • 2
    • 0036508039 scopus 로고    scopus 로고
    • Beyond the conventional transistor
    • March
    • H.-S.P. Wong, "Beyond the conventional transistor", IBM J. Res. Dev., vol. 46, March 2002, pp. 133-168
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    • Wong, H.-S.P.1
  • 3
    • 34147183634 scopus 로고    scopus 로고
    • Analysis of geometry-dependent parasitics in multifin double-gate FinFETs
    • April
    • W. Wu, and M. Chan, "Analysis of geometry-dependent parasitics in multifin double-gate FinFETs ", IEEE Trans. Electron Devices, vol. 54, April 2007, pp. 692-698
    • (2007) IEEE Trans. Electron Devices , vol.54 , pp. 692-698
    • Wu, W.1    Chan, M.2
  • 5
    • 18944386474 scopus 로고    scopus 로고
    • A novel isolation of pillar-like structures by the chemical-mechanical polishing and etch-back process
    • May
    • T. Suligoj , and K.L. Wang, "A novel isolation of pillar-like structures by the chemical-mechanical polishing and etch-back process", Electrochem. Solid-state Lett., vol. 8, May 2005, pp. 125-127
    • (2005) Electrochem. Solid-state Lett , vol.8 , pp. 125-127
    • Suligoj, T.1    Wang, K.L.2
  • 6
    • 0001156050 scopus 로고
    • Self-consistent results for n-type Si inversion layers
    • June
    • F. Stern, "Self-consistent results for n-type Si inversion layers", Physical Review B, vol. 5, June 1972, pp. 4891-4899
    • (1972) Physical Review B , vol.5 , pp. 4891-4899
    • Stern, F.1
  • 7
    • 67650685022 scopus 로고    scopus 로고
    • Accurate effective mobility extraction in SOl CMOS transistors
    • March
    • S.M. Thomas et aI., "Accurate effective mobility extraction in SOl CMOS transistors", Proc. IntI. Conf. Ultimate Integation of Silicon, March 2009, pp. 31-34
    • (2009) Proc. IntI. Conf. Ultimate Integation of Silicon , pp. 31-34
    • Thomas, S.M.1    aI2
  • 8
    • 84886448137 scopus 로고    scopus 로고
    • Subband structure engineering for performance enhancement of Si MOSFETs
    • December
    • S. Takagi , J. Koga, and A. Toriumi, "Subband structure engineering for performance enhancement of Si MOSFETs", IntI. Elect. Dev. Meeting, December 1997, pp. 219-222
    • (1997) IntI. Elect. Dev. Meeting , pp. 219-222
    • Takagi, S.1    Koga, J.2    Toriumi, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.