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Volumn 111, Issue 2-3, 2004, Pages 310-316

A three-dimensional MOS transistor formation technique with crystallographic orientation-dependent TMAH etchant

Author keywords

Corrugated channel transistor; Orientation dependent etching; TMAH; 1 1 0 Silicon substrate, three dimensional structure

Indexed keywords

ANISOTROPY; CRYSTALLOGRAPHY; DYNAMIC RANDOM ACCESS STORAGE; ETCHING; SILICON; SINGLE CRYSTALS;

EID: 1242298507     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.10.081     Document Type: Article
Times cited : (10)

References (10)
  • 6
    • 0026169335 scopus 로고
    • Impact of the vertical SOI "DELTA" structure on planar device technology
    • Hisamoto D., Kaga T., Takeda E. Impact of the vertical SOI "DELTA" structure on planar device technology. IEEE Trans. Electron. Devices. 38:1991;1419-1424.
    • (1991) IEEE Trans. Electron. Devices , vol.38 , pp. 1419-1424
    • Hisamoto, D.1    Kaga, T.2    Takeda, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.