Observation of interfacial reactions and recrystallization of extrinsic phases in epitaxial grown ZnO/GaAs heterostructures

Journal of Crystal Growth

Volumn 310, Issue 19, 2008, Pages 4305-4308

  Liu, H F ^a   Wong, A S W ^a   Hu, G X ^b   Gong, H ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A1. Heterostructures; B1. Zinc compound; B1. ZnO; B2. Semiconducting materials

Indexed keywords

CRYSTALS; HIGH RESOLUTION ELECTRON MICROSCOPY; MICROSCOPIC EXAMINATION; RECRYSTALLIZATION (METALLURGY); ZINC;

A1. HETEROSTRUCTURES; B1. ZINC COMPOUND; B1. ZNO; B2. SEMICONDUCTING MATERIALS; INTERFACIAL REACTIONS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 51649107237     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.062     Document Type: Article

References (24)

1. Hickernell F.S. Proc. IEEE Ultrason. Symp. (1980) 785
2. Kim Y., Hunt W.D., Hickernell F.S., and Higgins R.J. J. Appl. Phys. 75 (1994) 7299
3. Kim Y., Hunt W.D., Liu Y., and Jen C.K. J. Appl. Phys. 76 (1994) 1455
4. Lawrence D.J., Smith F.T., and Lee S.T. J. Appl. Phys. 69 (1991) 3011
5. Bae Park C., and Kim K. J. Appl. Phys. 83 (1998) 1327
6. Ryu Y.R., Zhu S., Look D.C., Wrobel J.M., Jeong H.M., and White H.W. J. Crystal Growth 216 (2000) 330
7. Ryu Y.R., Lee T.S., and White H.W. Appl. Phys. Lett. 83 (2003) 87
8. Ryu Y.R., Lee T.S., Lubguban J.A., White H.W., Park Y.S., and Youn C.J. Appl. Phys. Lett. 87 (2005) 153504
9. Wang P., Chen N., Yin Z., Yang F., Peng C., Dai R., and Bai Y. J. Appl. Phys. 100 (2006) 43704
10. Kang H.S., Kim G.H., Kim D.L., Chang H.W., Ahn B.D., and Lee S.Y. Appl. Phys. Lett. 89 (2006) 181103
11. Sun J.C., Zhao J.Z., Liang H.W., Bian J.M., Hu L.Z., Zhang H.Q., Liang X.P., Liu W.F., and Du G.T. Appl. Phys. Lett. 90 (2007) 121128
12. Yuldashev S.U., Panin G.N., Choi S.W., Yalishev V.Sh., Nosova L.A., Ryu M.K., Lee S., Jang M.S., Chung K.s., and Kang T.W. Jpn. J. Appl. Phys. 42 (2003) 3333
13. Ryu M.K., Lee S.H., Jang M.S., Panin G.N., and Kang T.W. J. Appl. Phys. 92 (2002) 154
14. Liu H.F., Chua S.J., Hu G.X., Gong H., and Xiang N. J. Appl. Phys. 102 (2007) 063507
15. Liu H.F., Chua S.J., Hu G.X., Gong H., and Xiang N. J. Appl. Phys. 102 (2007) 083529
16. Li J.H., Forrest R.L., Moss S.C., Zhang Y., Mascarenhas A., and Bai J. J. Appl. Phys. 91 (2002) 9039
17. Liu Q., Prost W., and Tegude F.J. Appl. Phys. Lett. 67 (1995) 2807
18. Joint Committee on Powder Diffraction Standards (JCPDS), Powder Diffraction Files, No. 11-542; No. 38-1240.
19. Kim J.S., Kim J.S., Kim T.W., Kim S.M., and Park H.L. Appl. Phys. Lett. 86 (2005) 91912
20. Isea R., Vegas A., and Ramos-Gallardo A. Acta Crystallogr. B54 (1998) 35
21. Kouklin N., Sen S., and Gajdardziska-Josifovska M. Appl. Phys. Lett. 89 (2006) 71901
22. Chelluri B., Chang T.Y., Ourmazd A., Dayem A.H., Zyskind J.L., and Srivastava A. Appl. Phys. Lett. 49 (1986) 1665
23. Pangilinan G., Sooryakumar R., Chelluri B., and Chang T.Y. Phys. Rev. Lett. 62 (1989) 551
24. Chen G.S., Jaw D.H., and Stringfellow G.B. J. Appl. Phys. 69 (1991) 4263