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Volumn 27, Issue 3, 2009, Pages 1655-1657

Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 79953893400     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3137967     Document Type: Conference Paper
Times cited : (7)

References (12)
  • 6
    • 39549115245 scopus 로고    scopus 로고
    • 10.1016/j.jcrysgro.2007.11.137
    • A. Ougazzaden, J. Cryst. Growth 310, 944 (2008). 10.1016/j.jcrysgro.2007. 11.137
    • (2008) J. Cryst. Growth , vol.310 , pp. 944
    • Ougazzaden, A.1
  • 10
    • 0032192251 scopus 로고    scopus 로고
    • Scanning near-field cathodoluminescence microscopy
    • DOI 10.1016/S0304-3991(98)00049-7, PII S0304399198000497
    • M. Troyon, D. Pastre, J. P. Jouart, and J. L. Beaudoin, Ultramicroscopy 75, 15 (1998). 10.1016/S0304-3991(98)00049-7 (Pubitemid 28494044)
    • (1998) Ultramicroscopy , vol.75 , Issue.1 , pp. 15-21
    • Troyon, M.1    Pastre, D.2    Jouart, J.P.3    Beaudoin, J.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.