Measurement of GaN/Ge(001) heterojunction valence band offset by X-Ray photoelectron spectroscopy

Chinese Physics Letters

Volumn 27, Issue 6, 2010, Pages

  Guo, Yan ^a   Liu, Xiang Lin ^a   Song, Hua Ping ^a   Yang, An Li ^a   Zheng, Gao Lin ^a   Wei, Hong Yuan ^a   Yang, Shao Yan ^a   Zhu, Qin Sheng ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ENERGY GAP; GERMANIUM COMPOUNDS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND ALIGNMENTS; CONDUCTION BAND OFFSET; HETEROSTRUCTURE INTERFACES; MEASUREMENTS OF; VALENCE-BAND OFFSET;

GALLIUM NITRIDE;

EID: 77953820054     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/6/067302     Document Type: Article

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