Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy

Applied Physics Letters

Volumn 91, Issue 9, 2007, Pages

  Zhang, Y ^a   McAleese, C ^a   Xiu, H ^a   Humphreys, C J ^a   Lieten, R R ^b   Degroote, B ^b   Borghs, G ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL QUALITY; MISORIENTED DOMAINS; STRUCTURAL CHARACTERIZATION;

EPILAYERS;

EID: 34548428301     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2779099     Document Type: Article

References (2)

1. R. R. Lieten, S. Degroote, K. Cheng, M. Leys, and G. M. Borghs, Appl. Phys. Lett. 89, 252118 (2006).
2. E. Trybus, G. Namkoong, W. Henderson, W. A. Doolittle, R. Liu, J. Mei, F. Ponce, M. Cheung, F. Chen, M. Furis, and A. Cartwright, J. Cryst. Growth 279, 311 (2005).