Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Zhang, Riqing ^a   Guo, Yan ^a   Song, Huaping ^a   Liu, Xianglin ^a   Yang, Shaoyan ^a   Wei, Hongyuan ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; HETEROJUNCTIONS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SPECTRUM ANALYSIS;

BAND ALIGNMENTS; CONDUCTION BAND OFFSET; HETERO JUNCTION; VALENCE BAND OFFSET;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 52949087539     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2992194     Document Type: Article

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