Growth of GaN on Ge(111) by molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Lieten, R R ^a,b   Degroote, S ^a   Cheng, K ^a   Leys, M ^a   Kuijk, M ^b   Borghs, G ^a  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; GROWTH (MATERIALS); HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS;

CURRENT-VOLTAGE MEASUREMENTS; HETEROJUNCTION DEVICES; VERTICAL DEVICES;

GALLIUM COMPOUNDS;

EID: 33845923603     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2410221     Document Type: Article

References (8)

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