Suppression of domain formation in GaN layers grown on Ge(1 1 1)

Journal of Crystal Growth

Volumn 311, Issue 5, 2009, Pages 1306-1310

  Lieten, R R ^a   Degroote, S ^a   Leys, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

A1. Crystal structure; A1. Growth models; A1. Single crystal growth; A3. Molecular beam epitaxy; B1. GaN; B1. Germanium; B1. Nitrides

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GERMANIUM; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; SUBSTRATES; TWO DIMENSIONAL;

A1. CRYSTAL STRUCTURE; A1. GROWTH MODELS; A1. SINGLE CRYSTAL GROWTH; A3. MOLECULAR BEAM EPITAXY; B1. GAN; B1. GERMANIUM; B1. NITRIDES;

CRYSTAL STRUCTURE;

EID: 61449243657     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.077     Document Type: Article

References (7)

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