Device simulation of mechanical stress effects on electrical characteristics of nMOSFETs: Impact of local stress in nMOSFETs

Proceedings of the ASME InterPack Conference 2009, IPACK2009

Volumn 1, Issue , 2010, Pages 119-124

  Koganemaru, Masaaki ^a   Yoshida, Keisuke ^b   Ikeda, Toru ^b   Miyazaki, Noriyuki ^b   Tomokage, Hajime ^c  

^a FUKUOKA INDUSTRIAL TECHNOLOGY CENTER   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c FUKUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; DEVICE SIMULATIONS; DRIFT DIFFUSION; ELECTRICAL CHARACTERISTIC; GATE LENGTH; LOCAL STRESS; MECHANICAL STRESS; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; MULTIPHYSICS SIMULATIONS; NMOSFETS; NUMERICAL SIMULATION; PACKAGING PROCESS; STRESS DISTRIBUTION; STRESS EFFECTS; STRESS-INDUCED;

CHIP SCALE PACKAGES; DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; RESIDUAL STRESSES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; STRESS CONCENTRATION;

COMPUTER SIMULATION;

EID: 77953736515     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/InterPACK2009-89112     Document Type: Conference Paper

References (19)

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