Evaluation of stress-induced effect on electronic characteristics of nMOSFETs using mechanical stress simulation and drift-diffusion device simulation

Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC

Volumn , Issue , 2008, Pages 839-844

  Koganemaru, Masaaki ^a   Ikeda, Toru ^b   Komori, Masateru ^b   Miyazaki, Noriyuki ^b   Tomokage, Hajime ^c  

^a FUKUOKA INDUSTRIAL TECHNOLOGY CENTER   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c FUKUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; RESINS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; STRESS CONCENTRATION; SYSTEMS ENGINEERING;

DEVICE SIMULATIONS; ELECTRONIC CHARACTERISTICS; MECHANICAL STRESSES; PACKAGING PROCESSES; SIMULATION METHODS; SIMULATION MODELS; STRESS DISTRIBUTIONS; STRESS EFFECTS;

STRESSES;

EID: 58149096408     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESTC.2008.4684461     Document Type: Conference Paper

References (8)

1. Koganemaru, M. et al, "Residual Stress Evaluation in Resin-Molded IC Chips using Finite Element Analysis and Piezoresistive Gauges," Microelectronics Reliability, in press.
2. Koganemaru, M. et a, "Stress-Induced Effects in Electronic Characteristics of n-Type MOSFETs in Resin-Molded Packages," Proceedings of IPACK2007, Vancouver, CANADA, July. 2007, IPACK2007-33533.
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5. Herring, C. and Vogt, E., "Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering," Physical Review, Vol. 101, No. 3 (1956), pp. 944-961.
6. th ed.
7. Lancaster, P. and Salkauskas, K., "Surfaces Generated by Mobing Least Squares Methods," Mathematics of Computation, Vol. 37, No. 155 (1981), pp. 141-158.
8. Gallon, C. et al, "Electrical Analysis of External Mechanical Stress Effects in Short Channel MOSFETS on (001) Silicon," Solid-State Electronics, Vol. 48, (2004), pp. 561-566.