Influence of direct Au-bump formation on metal oxide semiconductor field effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2714-2719

  Watanabe, Naoya ^a   Asano, Tanemasa ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Area bump; Direct au bump formation; MOSFET; Strain gauge

Indexed keywords

ELECTRIC PROPERTIES; MOSFET DEVICES; STRAIN GAGES; TRANSCONDUCTANCE; ULTRASONIC PROPAGATION;

AREA BUMP; CRYSTALLOGRAPHIC ORIENTATION; DIRECT AU-BUMP FORMATION;

GOLD;

EID: 0037478042     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2714     Document Type: Article

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