Mobility change of MOSFETs in a chip-stacked multichip package

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 89, Issue 7, 2006, Pages 1-8

  Ikeda, Akihiro ^a   Hamaguchi, Kiyoshi ^b   Ogi, Hiroshi ^b   Iwasaki, Kazuya ^b   Hattori, Reiji ^a   Kuroki, Yukinori ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b Hara Seiki Industry Co Ltd   (Japan)

Author keywords

Mobility; MOSFET; Plastic deformation; Stress; Three dimensional package

Indexed keywords

BENDING (DEFORMATION); BONDING; CHIP SCALE PACKAGES; COMPRESSIVE STRESS; ELECTRON MOBILITY; FLIP CHIP DEVICES; MULTICHIP MODULES; PLASTIC DEFORMATION; STRAIN;

INTERCHIP CONNECTION; NONCONDUCTIVE PASTE (NCP); PIEZORESISTANCE EFFECT; THERMOCOMPRESSION BONDING;

MOSFET DEVICES;

EID: 33746151658     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.20246     Document Type: Article

References (21)

1. Bonkohara M, Takahashi K, Ishino M. Trends and prospects in SiP technology and three dimensional packaging technology. Trans IEICE 2004;J87-C:791-801.
2. Kada M. The dawn of 3D packaging as system-in-package (SIP).IEICE Trans Electron 2001;E84-C:1763-1770.
3. Dohya A. Packaging technology trends and challenges for system-in-package. IEICE Trans Electron 2001;E84-C:1756-1762.
4. Kurino H, Nakagawa Y, Nakamura T, Yamada Y, Lee KW, Koyanagi M. Biologically inspired vision chip with three dimensional structure. IEICE Trans Electron 2001;E84-C:1717-1722.
5. Tanida K, Umemoto M, Tanaka N, Tomita Y, Takahashi K. Micro Cu bump interconnection on 3D chip stacking technology. Jpn J Appl Phys 2004;43:2264-2270.
6. Tanida K, Umemoto M, Tomita Y, Tago M, Kajiwara R, Akiyama Y, Takahashi K. Au bump interconnection with ultrasonic flip-chip bonding in 20 μm pitch. Jpn J Appl Phys 1 Regul Pap 2003;42:2198-2203.
7. Watanabe N, Asano T. Behavior of plated microbumps during ultrasonic flip-chip bonding determined from dynamic strain measurement. Jpn J Appl Phys 1 Regul Pap 2003;42:511-517.
8. Smith CS. Piezoresistance effect in silicon and germanium. Phys Rev 1954;94:42-49.
9. Kanda Y. A graphical representation of the piezoresistive coefficients in silicon. IEEE Trans Electron Devices 1982;29:64-70.
10. Hamada A, Furusawa T, Saito N, Takeda E. A new aspect of mechanical stress effects in scaled MOS devices. IEEE Trans Electron Devices 1991;38:895-900.
11. Miura H, Kitano M, Nishimura A, Kawai S. Thermal stress measurement in silicon chips encapsulated in IC plastic packages under thermal cycling. J Electron Packag 1993;115:9-15.
12. Miura H, Nishimura A. Device characteristic changes caused by packaging stress. ASME, Mechanics and Materials for Electronic Packaging, Vol. AMD-195, p 101-109, 1994.
13. Fischetti MV, Laux SE. Band structure deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. J Appl Phys 1996;80:2234-2252.
14. Suhling JC, Jaeger RC. Silicon piezoresistive stress sensors and their application in electronic packaging. IEEE Sensors J 2001;1:14-30.
15. Kumagai Y, Ohta H, Miura H, Shimizu A. Stress-optimization of a thin-film semiconductor. Proc Int Symposium on Micro-Mechanical Engineering, p 427-432, Tsuchiura, 2003.
16. Mikoshiba H. Stress-sensitive properties of silicon-gate MOS devices. Solid-State Electron 1981;24: 221-232.
17. Bradley AT, Jaeger RC, Suhling JC, O'Connor KJ. Piezoresistive characteristics of short-channel MOSFETs on (100) silicon. IEEE Trans Electron Devices 2001;48:2009-2015.
18. Shiraishi K, Nagase M, Horiguchi S, Kageshima H, Uematsu M, Takahashi Y, Murase K. Designing of silicon effective quantum dots by using the oxidation-induced strain: A theoretical approach. Physica E 2000;7:337-341.
19. Chen TS, Huang YR. Evaluation of MOS devices as mechanical stress sensors. IEEE Trans Compon Packag Technol 2002;25:2193-2197.
20. Smith CS. Piezoresistance effect in germanium and silicon. Phys Rev 1954;94:42-49.
21. Colman D, Bate RT, Mize JP. Mobility anisotropy and piezoresistance in silicon P-type inversion layers. J Appl Phys 1968;39:1923-1931.