Resonant tunneling in III-nitrides

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1249-1254

  Litvinov, Vladimir I ^a  

^a SIERRA NEVADA CORPORATION   (United States)

Author keywords

Resonant tunneling devices; Resonant tunneling diodes; Wide bandgap semiconductors

Indexed keywords

DIODES; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; RESONANT TUNNELING; WIDE BAND GAP SEMICONDUCTORS;

COHERENT MICROWAVES; DOUBLE BARRIERS; EMBRYONIC STAGES; HIGH TEMPERATURE; HIGH-POWER OPERATION; NEGATIVE DIFFERENTIAL CONDUCTIONS; RESONANT TUNNELING DEVICE; RESONANT TUNNELING STRUCTURE;

RESONANT TUNNELING DIODES;

EID: 77953686354     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2039027     Document Type: Conference Paper

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