Investigation of vertical current-voltage characteristics of Al(Ga)N/GaN RTD-like heterostructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Lee, J ^a   Fan, Q ^a   Ni, X ^a   Ozgur, U ^a   Litvinov, V ^b   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b Waveband Inc   (United States)

Author keywords

GaN AlN in situ SiN nanonetwork; MOCVD; RTD like vertical double barrier structure

Indexed keywords

AS DOPING; ASYMMETRIC BARRIERS; CHEMICAL ETCHINGS; DEPLETION REGIONS; DOPING PROFILE OPTIMIZATIONS; DOUBLE HETEROSTRUCTURES; EPITAXIAL LATERAL OVERGROWTHS; GAN/ALN IN SITU SIN NANONETWORK; HETEROSTRUCTURES; HIGH QUALITIES; I-V CHARACTERISTICS; ICP-RIE; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHINGS; LOW DEFECT DENSITIES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; NEGATIVE DIFFERENTIAL RESISTANCES; QUANTUM STATE; QUANTUM WELLS; QUANTUM-MECHANICAL TUNNELING; RESONANT INCREASE; RESONANT-TUNNELING DIODES; RTD-LIKE VERTICAL DOUBLE BARRIER STRUCTURE; THREADING DISLOCATION DENSITIES; VERTICAL CURRENTS;

ALUMINUM; CRYSTALS; DEFECT DENSITY; DISTILLATION; ELECTRON TUBE DIODES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE RESISTANCE; ORGANIC CHEMICALS; ORGANOMETALLICS; REACTIVE ION ETCHING; RESONANT TUNNELING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SILICON NITRIDE; SURFACE DEFECTS; TEMPERATURE MEASURING INSTRUMENTS; TUNNEL DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65349129353     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809435     Document Type: Conference Paper

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