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Volumn 5, Issue 2, 2008, Pages 431-434
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Bi-stable behaviour in GaN-based resonant tunnelling diode structures
a
CEA GRENOBLE
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
ALN BARRIERS;
BISTABLES;
CURRENT LEVELS;
DOUBLE-BARRIER STRUCTURES;
ELECTRONIC TRANSPORT;
NEGATIVE DIFFERENTIAL RESISTANCES;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
POSITIVE BIAS;
RESONANT TUNNELLING DIODE;
WELL THICKNESS;
CRYSTAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
RESONANT TUNNELING;
WIND TUNNELS;
RESONANT TUNNELING DIODES;
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EID: 58149529665
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200777463 Document Type: Conference Paper |
Times cited : (25)
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References (11)
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