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Volumn 5, Issue 2, 2008, Pages 431-434

Bi-stable behaviour in GaN-based resonant tunnelling diode structures

Author keywords

[No Author keywords available]

Indexed keywords

ALN BARRIERS; BISTABLES; CURRENT LEVELS; DOUBLE-BARRIER STRUCTURES; ELECTRONIC TRANSPORT; NEGATIVE DIFFERENTIAL RESISTANCES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POSITIVE BIAS; RESONANT TUNNELLING DIODE; WELL THICKNESS;

EID: 58149529665     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200777463     Document Type: Conference Paper
Times cited : (25)

References (11)
  • 10
    • 77951139066 scopus 로고    scopus 로고
    • available on-line
    • Nextnano3 software, available on-line:http://www.nextnano.de
    • Nextnano3 Software


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.