Field emission from GaN and (Al,Ga) NGaN nanorod heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 15-18

  Deb, Parijat ^a   Westover, Tyler ^a   Kim, Hogyoung ^a   Fisher, Timothy ^a   Sands, Timothy ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FIELD EMISSION; HETEROJUNCTIONS; MICROFABRICATION; NANORODS;

NANOROD HETEROSTRUCTURE; NANOROD HETEROSTRUCTURES; VACUUM FIELD EMISSION;

GALLIUM NITRIDE;

EID: 34249887081     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2732735     Document Type: Article

References (19)

1. H. M. Kim, T. W. Kang, K. S. Chung, J. P. Hong, and W. B. Choi, Chem. Phys. Lett. 377, 492 (2003).
2. M. Deguchi and T. Uenoyama, Jpn. J. Appl. Phys., Part 2 39, L641 (2000).
3. I. Berishev, A. Bensaoula, I. Rusakova, A. Karabutov, M. Ugarov, and V. P. Ageev, Appl. Phys. Lett. 73, 1808 (1998).
4. C. Kimura, T. Yamamoto, and T. Sugino, J. Vac. Sci. Technol. B 21, 544 (2003).
5. E. Ertekin, P. A. Greaney, D. C. Chrzan, and T. D. Sands, J. Appl. Phys. 97, 114325 (2005).
6. S. P. Grabowski, M. Schneider, H. Nienhaus, W. Monch, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 78, 2503 (2001).
7. A. T. Sowers, J. A. Christman, M. D. Bremser, B. L. Ward, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 71, 2289 (1997).
8. R. D. Underwood, D. Kapolnek, B. P. Keller, S. Keller, S. P. Denbaars, and U. K. Mishra, Solid-State Electron. 41, 243 (1997).
9. B. L. Ward, et al., J. Appl. Phys. 84, 5238 (1998).
10. T. Sugina, T. Hori, C. Kimura, and T. Yamamoto, Appl. Phys. Lett. 78, 3229 (2001).
11. Y. Terada, H. Yoshida, T. Urushido, H. Miyake, and K. Hiramatsu, Jpn. J. Appl. Phys., Part 2 41, L1194 (2002).
12. P. Deb, H. Kim, V. Rawat, M. Oliver, S. Kim, M. Marshall, E. Stach, and T. Sands, Nano Lett. 5, 1847 (2005).
13. P. Deb, H. Kim, Y. Qin, R. Lahiji, M. Oliver, R. Reifenberger, and T. Sands, Nano Lett. 6, 2893 (2006).
14. R. H. Fowler and L. W. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928).
15. D. R. Hang, C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, J. Appl. Phys. 90, 1887 (2001).
16. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Vol. 2, p. 497.
17. R. H. Good and E. W. Muller, Handbuch der Physik (Springer, Heidelberg, 1956), Vol. 21, p. 176.
18. T. Kozawa, T. Ohwaki, Y. Taga, and N. Sawaki, Appl. Phys. Lett. 75, 3330 (1999).
19. O. H. Nam, M. D. Bremser, B. L. Ward, R. J. Nemanich, and R. F. Davis, Jpn. J. Appl. Phys., Part 2 36, L532 (1997).