Nonlinear characteristics of T-branch junctions: Transition from ballistic to diffusive regime

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Irie, H ^a   Diduck, Q ^b   Margala, M ^b   Sobolewski, Roman ^a,c   Feldman, M J ^a  

^a University of Rochester   (United States)

^b University of Massachusetts   (United States)

^c UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; DEVICE SIZES; DIFFUSIVE REGIMES; ELECTRICAL CHARACTERISTICS; ELECTRONIC TRANSPORTS; EXPERIMENTAL ANALYSIS; HETEROSTRUCTURE; HIGH VOLTAGES; NANO CHANNELS; NANO-STRUCTURED; NON-LINEAR CHARACTERISTICS; OPERATING TEMPERATURES; SYSTEMATIC VARIATIONS; T-BRANCH JUNCTIONS;

BALLISTICS; ELECTRON GAS; NANOFLUIDICS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 51849131028     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968129     Document Type: Article

References (20)

1. A. M. Song, A. Lorke, A. Kriele, J. P. Kotthaus, W. Wegscheider, and M. Bichler, Phys. Rev. Lett. 80, 3831 (1998).
2. Q. Diduck, M. Margala, and M. J. Feldman, IEEE MTT-S Int. Microwave Symp. Dig. 2006, 345.
3. H. Q. Xu, Appl. Phys. Lett. 78, 2064 (2001).
4. I. Shorubalko, H. Q. Xu, I. Maximov, P. Omling, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 79, 1384 (2001).
5. D. Wallin, I. Shorubalko, H. Q. Xu, and A. Cappy, Appl. Phys. Lett. 89, 092124 (2006).
6. J. Mateos, B. G. Vasallo, D. Pardo, and T. González, IEEE Electron Device Lett. 25, 235 (2004).
7. I. Iiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J. S. Galloo, S. Bollaert, Y. Roelens, and A. Cappy, Semicond. Sci. Technol. 22, 663 (2007).
8. C. R. Müller, L. Worschech, P. Höpfner, S. Höfling, and A. Forchel, IEEE Electron Device Lett. 28, 859 (2007).
9. L. Bednarz, Ph.D. thesis, Universit́ Catholique de Louvain, 2007.
10. D. B. Suyatin, J. Sun, A. Fuhrer, D. Wallin, L. E. Fröberg, L. S. Karlsson, I. Maximov, L. R. Wallenberg, L. Samuelson, and H. Q. Xu, Nano Lett. 8, 1100 (2008).
11. H. Q. Xu, I. Shorubalko, D. Wallin, I. Maximov, P. Omling, L. Samuueson, and W. Seifert, IEEE Electron Device Lett. 25, 164 (2004).
12. J. Sun, D. Wallin, I. Maximov, and H. Q. Xu, IEEE Electron Device Lett. 29, 540 (2008).
13. M. Büttiker, Phys. Rev. Lett. 57, 1761 (1986).
14. A. N. Jordan and M. Büttiker, Phys. Rev. B 77, 075334 (2008).
15. D. Csontos and H. Q. Xu, Phys. Rev. B 67, 235322 (2003).
16. R. Fleischmann and T. Geisel, Phys. Rev. Lett. 89, 016804 (2002).
17. See, for example, S. M. Sze, Modern Semiconductor Device Physics (Wiley, New York, 1998).
18. A. M. Song, Encyclopedia of Nanoscience and Nanotechnology, edited by, H. S. Nalwa, (American Scientific Publishers, Stevenson Ranch, CA, 2004), Vol. 9, pp. 371-379.
19. W.-P. Hong and P. K. Bhattacharya, IEEE Trans. Electron Devices 34, 1491 (1987).
20. N. Shigekawa, T. Furuta, and K. Arai, J. Appl. Phys. 69, 4003 (1991).