Boolean logic gates utilizing gaas three-branch nanowire junctions controlled by schottky wrap gates

Japanese Journal of Applied Physics

Volumn 48, Issue 6 PART 2, 2009, Pages

  Rahman, Shaharin Fadzli Bin Abd ^a   Nakata, Daisuke ^a   Shiratori, Yuta ^a   Kasai, Seiya ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOOLEAN LOGIC; GAAS; GATE OPERATION; GATE VOLTAGES; MEASUREMENT CIRCUIT; NAND GATE; NOT GATE; OUTPUT VOLTAGE SWINGS; SCHOTTKY WRAP GATES; SIMPLE EQUIVALENT CIRCUIT MODEL; THREE-BRANCH NANOWIRE JUNCTIONS; VOLTAGE INPUT; VOLTAGE TRANSFER GAIN;

GALLIUM ALLOYS; LOGIC GATES; NANOWIRES; SEMICONDUCTING GALLIUM;

NANOTECHNOLOGY;

EID: 70249126550     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.06FD01     Document Type: Article

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