Operation of InGaAs/InP-based ballistic rectifiers at room temperature and frequencies up to 50 GHz

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 9 A/B, 2001, Pages

  Song, Aimin M ^a   Omling, Pär ^a   Samuelson, Lars ^a   Seifert, Werner ^a   Shorubalko, Ivan ^a   Zirath, Herbert ^b  

^a LUND UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Ballistic transport; Microwave; Nanodevice; Nonlinear; Rectifier

Indexed keywords

ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; MICROWAVES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

BALLISTIC ELECTRON TRANSPORT; MICROWAVE DIODES; NANODEVICE;

ELECTRIC RECTIFIERS;

EID: 0035885670     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l909     Document Type: Letter

References (14)