A study of geometry effects on the performance of ballistic deflection transistor

IEEE Transactions on Nanotechnology

Volumn 9, Issue 6, 2010, Pages 723-733

  Kaushal, Vikas ^a   Iñiguez De La Torre, Ignacio ^a   Irie, Hiroshi ^b   Guarino, Gregg ^b   Donaldson, William R ^b   Ampadu, Paul ^b   Sobolewski, Roman ^b,c   Margala, Martin ^a  

^a University of Massachusetts   (United States)

^b University of Rochester   (United States)

^c UNIVERSITY OF ROCHESTER   (United States)

Author keywords

Experimental measurements; Monte Carlo (MC) modeling; nanotechnology; surface charge; transconductance

Indexed keywords

CHANNEL WIDTHS; DIFFERENT GEOMETRY; DRAIN BIAS; EXPERIMENTAL MEASUREMENTS; EXPERIMENTAL STUDIES; GATE CONTROL; GEOMETRY EFFECTS; GEOMETRY VARIATIONS; MONTE CARLO; MONTE CARLO MODELING; QUASI-BALLISTIC; TRANSFER CHARACTERISTICS;

BALLISTICS; CHARGED PARTICLES; COMPUTATIONAL GEOMETRY; MONTE CARLO METHODS; NANOTECHNOLOGY;

TRANSCONDUCTANCE;

EID: 77953627426     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2050069     Document Type: Article

References (33)

1. A. M. Song, A. Lorke, A. Kriele, J. P. Kothaus, W. Wegscheider, and M. Bichler, "Nonlinear electron transport in an asymmetric microjunction: A ballistic rectifier, " Phys. Rev. Lett., vol. 80, pp. 3831-3834, 1998.
2. I. Shorubalko, H. Q. Xu, I. Maximov, P. Omling, L. Samuelson, and W. Seifert, "Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions, " Appl. Phys. Lett., vol. 79, pp. 1384-1386, 2001. (Pubitemid 33599608)
3. A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, "Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device, " Appl. Phys. Lett., vol. 83, pp. 1881-1883, 2003.
4. Y. Hirayama and S. Tarucha, "High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures, " Appl. Phys. Lett., vol. 63, pp. 2366-2368, 1993.
5. K. Hieke, J. O. Wesström, E. Forsberg, and C. F. Carlström, "Ballistic transport at room temperature in deeply etched cross-junctions, " Semicond. Sci. Tech., vol. 15, pp. 272-276, 2000.
6. A. Song, "Room temperature ballistic nanodevices, " Encyclopedia Nanosci. Nanotechnol., vol. 9, pp. 371-389, 2004.
7. M. Büttiker, "Absence of backscattering in the quantum Hall effect in multiprobe conductors, " Phys. Rev. B, vol. 38, pp. 9375-9389, 1988.
8. H. van Houten, C. W. J. Beenakker, P. H. M. van Loosdrecht, T. J. Thornton, H. Ahmed, M. Pepper, C. T. Foxon, and J. J. Harris, "Fourterminal magnetoresistance of a two-dimensional electron-gas constriction in the ballistic regime, " Phys. Rev. B, vol. 37, pp. 8534-8536, 1988.
9. L. W. Molenkamp, A. A. M. Staring, C. W. J. Beenakker, R. Eppenga, C. E. Timmering, J. G. Williamson, C. J. P. M. Harmans, and C. T. Foxon, "Electron-beam collimation with a quantum point contact, " Phys. Rev. B, vol. 41, pp. 1274-1277, 1990.
10. J. Spector, H. L. Stormer, K. W. Baldwin, L. N. Pfeiffer, and K. W. West, "Electron focusing in two-dimensional systems by means of an electrostatic lens, " Appl. Phys. Lett., vol. 56, pp. 1290-1292, 1990.
11. U. Sivan, M. Heiblum, C. P. Umbach, and H. Shtrikman, "Electrostatic electron lens in the ballistic regime, " Phys. Rev. B, vol. 41, pp. 7937-7940, 1990.
12. G. Timp, H. U. Baranger, P. Devegvar, J. E. Cunningham, R. E. Howard, R. Behringer, and P. M. Mankiewich, "Propagation around a bend in a multichannel electron waveguide, " Phys. Rev. Lett., vol. 60, pp. 2081-2084, 1988.
13. M. L. Roukes, A. Scherer, S. J. Allen, H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, "Quenching of the hall effect in a onedimensional wire, " Phys. Rev. Lett., vol. 59, pp. 3011-3014, 1987.
14. C. J. B. Ford, S. Washburn, M. Büttiker, C. M. Knoedler, and J. M. Hong, "Influence of geometry on the hall effect in ballistic wires, " Phys. Rev. Lett., vol. 62, pp. 2724-2727, 1989.
15. C. W. J. Beenakker and H. van Houten, "Magnetotransport and nonadditivity of point-contact resistances in series, " Phys. Rev. B, vol. 39, pp. 10445-10448, 1989.
16. D. Huo, Q. Yu, D. Wolpert, and P. Ampadu, "A simulator for ballistic nanostructures in a 2-D electron gas, " ACM J. Emerg. Technol. Comput. Syst., vol. 5, no. 1, pp. 5.1-5.21, Jan. 2009.
17. V. Kaushal, M. Margala, Q. Yu, P. Ampadu, G. Guarino, and R. Sobolewski, "Current transport modeling and experimental study of THz room temperature ballistic deflection transistors, " J. Phys., Conf. Ser., vol. 193, pp. 012092-1-012092-4, 2009.
18. J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy, "Ballistic nanodevices for terahertz data processing: Monte Carlo simulations, " Nanotechnology, vol. 14, pp. 117-122, 2003.
19. J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, S. Bollaert, Y. Roelens, and A. Cappy, "Microscopic modeling of nonlinear transport in ballistic nanodevices, " IEEE Trans. Electron. Devices, vol. 50, no. 9, pp. 1897-1905, Sep. 2003.
20. Q. Diduck, H. Irie, and M. Margala, "A room temperature ballistic deflection transistor for high performance applications, " Int. J. High Speed Electron. Syst., vol. 19, pp. 23-31, 2009.
21. D. Wolpert, H. Irie, R. Sobolewski, P. Ampadu, Q. Diduck, and M. Margala, "Ballistic deflection transistors and the emerging nanoscale era, " in Proc. ISCAS 2009, May 27, pp. 61-64.
22. Finite Element Analysis software, COMSOL Multiphysics, COMSOL AB, 1998.
23. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. New York: Springer-Verlag, 1989.
24. H. Kim, H. S. Min, T. W. Tang, and Y. J. Park, "An extended proof of the Ramo-Shockley theorem, " Solid-State Electron., vol. 34, pp. 1251-1253, 1991.
25. J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens, and A. Cappy, "Nonlinear effects in T-branch junctions, " IEEE Electron. Device Lett., vol. 25, no. 5, pp. 235-237, May 2004.
26. I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, and J. Mateos, "Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions, " J. Appl. Phys., vol. 105, pp. 094504-1-094504-7, 2009.
27. I. Iñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J. S. Galloo, S. Bollaert, Y. Roelens, and A. Cappy, "Influence of the surface charge on the operation of ballistic T-branch junctions: A self-consistent model for Monte Carlo simulations, " Semicond. Sci. Technol., vol. 22, pp. 663-670, 2007.
28. B. G. Vasallo, T. González, D. Pardo, and J. Mateos, "Monte Carlo analysis of four terminal ballistic rectifiers, " Nanotechnology, vol. 15, pp. S250-S253, 2004.
29. H. Irie and R. Sobolewski, "Terahertz electrical response of nanoscale three-branch junctions, " J. Appl. Phys., vol. 107, pp. 084315-1-084315-7, 2010.
30. J. S. Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, A. Cappy, J. Mateos, and T. González, "Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures, " in Proc. 2004 Int. Conf. Indium Phosphide Relat. Mater., 2004, pp. 378-381.
31. T. Sadi, F. Dessenne, and J. Thobel, "Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures, " J. Appl. Phys., vol. 105, pp. 053707-1-053707-9, 2009.
32. T. Sadi and J. Thobel, "Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator, " J. Appl. Phys., vol. 105, pp. 083709-1-083709-9, 2009.
33. K. Hieke, J. Wesstrom, T. Palm, B. Stalnacke, and B. Stoltz, "Ballistic transport and gate control mechanism in deeply etched electron waveguide based devices, " Solid-State Electron., vol. 42, pp. 1115-1119, 1998.