Nanometer-scale two-terminal semiconductor memory operating at room temperature

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Song, A M ^a   Missous, M ^a   Omling, P ^b   Maximov, I ^b   Seifert, W ^b   Samuelson, L ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; NANOTECHNOLOGY; RANDOM ACCESS STORAGE; THERMAL EFFECTS;

HIGH INTEGRATION DENSITY; SEMICONDUCTOR CHANNELS; SEMICONDUCTOR MEMORY OPERATING; SINGLE ELECTRON TRANSISTOR (SET);

SEMICONDUCTOR DEVICES;

EID: 13644278175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1852711     Document Type: Article

References (13)

1. D. V. Averin and K. K. Likharev, J. Low Temp. Phys. 62, 345 (1986).
2. T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).
3. U. Meiave, M. A. Kastner, and S. J. Wind, Phys. Rev. Lett. 65, 771 (1990).
4. C. W. J. Beenakker and H. van Houten, Solid State Phys. 44, l (1991).
5. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, UK, 1995).
6. J. Imry, Introduction to Mesoscopic Physics (Oxford University Press, New York, 1997).
7. B. J. van Wees, H. van Houten, C. W. J. Beenakker, J. G. Williamson, L. P. Kouwenhoven, D. van der Marel, and C. T. Foxon, Phys. Rev. Lett. 60, 848 (1988).
8. D. A. Wharam, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, J. E. F. Frost, D. G. Hasko, D. C. Peacock, D. A. Ritchie, and G. A. C. Jones, J. Phys. C 21, L209 (1988).
9. K. K. Likharev, Proc. IEEE 87, 606 (1999).
10. L. P. Kouwenhoven, D. G. Austing, and S. Tarucha, Rep. Prog. Phys. 64, 701 (2001).
11. A. T. Tilke, F. C. Simmel, R. H. Blick, H. Lorenz, and J. P. Kotthaus, Prog. Quantum Electron. 25, 97 (2001).
12. A. M. Song, M. Missous, P. Omling, A. R. Peaker, L, Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881 (2003).
13. J. Mateos, B. G. Vasallo, D. Pardo, T. González, and A. M. Song, Proceedings of the 16th International Conference on Indium Phosphide and Related Materials, 31 May-4 June 2004, Kagoshima, Japan.