Ballistic nano-devices for high frequency applications

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4321-4326

  Bollaert, S ^a   Cappy, A ^a   Roelens, Y ^a   Galloo, J S ^a   Gardes, C ^a   Teukam, Z ^a   Wallart, X ^a   Mateos, J ^b   Gonzalez, T ^b   Vasallo, B G ^b   Hackens, B ^c   Berdnarz, L ^c   Huynen, I ^c  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITY OF SALAMANCA   (Spain)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Ballistic; Indium phosphide; Nanostructures

Indexed keywords

CAPACITANCE; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC IMPEDANCE; ELECTRIC RECTIFIERS; LEAKAGE CURRENTS; MONTE CARLO METHODS;

BALLISTIC JUNCTION; PARASITIC CAPACITANCES; RECTIFYING EFFECTS;

SEMICONDUCTOR JUNCTIONS;

EID: 33847151807     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.178     Document Type: Article

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