Sign reversal and tunable rectification in a ballistic nanojunction

Applied Physics Letters

Volumn 85, Issue 19, 2004, Pages 4508-4510

  Hackens, B ^a   Gence, L ^a   Gustin, C ^a   Wallart, X ^b   Bollaert, S ^b   Cappy, A ^b   Bayot, V ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ETCHING; HETEROJUNCTIONS; MATHEMATICAL MODELS;

BALLISTIC NANOJUNCTIONS; MESOSCOPIC JUNCTIONS; RECTIFICATION EFFECTS; TUNABLE RECTIFICATION;

ELECTRON GAS;

EID: 10844287922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814803     Document Type: Conference Paper

References (18)

1. N. Tesla, Valvular Conduit. US Patent No. 1.329.559.
2. H. Linke, W. D. Sheng, A. Svensson, A. Löfgren, L. Christensson. H. Q. Xu. and P. Omling. Phys. Rev. B 61, 15914 (2000).
3. K. Hieke and M. Ulfward, Phys. Rev. B 62, 16727 (2000): I. Shorubalko, H. Q. Xu. I. Maximov, P. Omling, L. Samuelson, and W. Seifert. Appl. Phys. Lett. 79, 1384 (2001).
4. K. Hieke and M. Ulfward, Phys. Rev. B 62, 16727 (2000): I. Shorubalko, H. Q. Xu. I. Maximov, P. Omling, L. Samuelson, and W. Seifert. Appl. Phys. Lett. 79, 1384 (2001).
5. A. M. Song, A. Lorke, A. Kriele, J. P. Kotthaus, W. Wegscheider, and M. Bichler, Phys. Rev. Lett. 80, 3831 (1998): A. Löfgren, I. Shorubalko. P. Omling, and A. M. Song. Phys. Rev. B 67, 195309 (2003).
6. A. M. Song, A. Lorke, A. Kriele, J. P. Kotthaus, W. Wegscheider, and M. Bichler, Phys. Rev. Lett. 80, 3831 (1998): A. Löfgren, I. Shorubalko. P. Omling, and A. M. Song. Phys. Rev. B 67, 195309 (2003).
7. S. de Haan, A. Lorke, J. P. Kotthaus, W. Wegscheider, and M. Bichler, Phys. Rev. Lett. 92, 056806 (2004).
8. R. Fleischmann and T. Geisel, Phys. Rev. Lett. 89, 016804 (2002): M. Bütriker and D. Sanchez, ibid 96, 119701 (2003): T. Geisel and R. Fleischmann. ibid. 90, 119702 (2003).
9. R. Fleischmann and T. Geisel, Phys. Rev. Lett. 89, 016804 (2002): M. Bütriker and D. Sanchez, ibid 96, 119701 (2003): T. Geisel and R. Fleischmann. ibid. 90, 119702 (2003).
10. R. Fleischmann and T. Geisel, Phys. Rev. Lett. 89, 016804 (2002): M. Bütriker and D. Sanchez, ibid 96, 119701 (2003): T. Geisel and R. Fleischmann. ibid. 90, 119702 (2003).
11. J. Mateos, B. G. Vasallo, D. Pardo, T. Gonzàlez, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy. Nanotechnology 14, 117 (2003).
12. A. M. Song, P. Omling, L. Samuelson, W. Seifert, I. Shorubaiko, and H. Zirath, Appl. Phys. Lett. 79, 1357 (2001).
13. L. W. Molenkamp, H. van Houten, C. W. J. Beenakker, R. Eppenga, and C. T. Foxon, Phys. Rev. Lett. 65, 1052 (1990).
14. IJ is the conductance of the branch I-J in parallel with the conductance of branches I-K. K-M. and M-J in series (where K and M are the other channels).
15. 5D would not change our conclusions.
16. s and device size in Ref. 5.
17. The current used in our experiment can be large enough to induce Joule heating of the electron system, so that it is logical to consider thermal voltages as a potential explanation to die observed nonlinear transverse voltage. However, an earlier work (Ref. 9) showed that a necessary condition for die occurence of such a thermal voltage in a four terminal configuration is a quantized regime of transport, at least in the narrower part of the device. As the temperature dependence of the effect is consistent with a ballistic regime of transport (and not with a quantized regime). we can exclude a thermal origin for die nonlinear effect.
18. P. F. Bagwell and T. P. Orlando, Phys. Rev. B 40, 1456 (1989).