Focused ion beam milled InGaN/GaN multiple quantum well nanopillars

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 3130-3133

  Wu, Shang En ^a   Hsueh, Tao Hung ^a   Liu, Chuan Pu ^a   Sheu, Jinn Kong ^a   Lai, Wei Chih ^a   Chang, Shoou Jinn ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

LEDs; Nanorods; Nanotips; Spot shape; Stigmator

Indexed keywords

ASPECT RATIO; BEAM PLASMA INTERACTIONS; ELECTROMAGNETIC WAVES; FOCUSED ION BEAMS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; ION BOMBARDMENT; IONS; MICROSCOPIC EXAMINATION; PLANTS (BOTANY); SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; TUNING; WELLS;

BLUE SHIFTS; CONTRAST IMAGING; CRYSTALLINE NATURES; DEFOCUS; HIGH-RESOLUTION; INGAN/GAN; LEDS; MULTIPLE QUANTUM WELLS; NANOPILLARS; OPTICAL CHARACTERIZATIONS; PEAK POSITIONS; QUANTUM WELLS; SHAPE TUNING; SIZE AND SHAPES; SPOT SHAPE; STIGMATOR;

SEMICONDUCTOR QUANTUM WELLS;

EID: 54249160075     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3130     Document Type: Article

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