Improved Emission Efficiency in InGaN / GaN Quantum Wells with Compositionally-Graded Barriers Studied by Time-Resolved Photoluminescence Spectroscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 11 B, 2003, Pages

  Onuma, Takeyoshi ^a   Uchinuma, Yoshimasa ^a   Suh, Eun Kyung ^b   Lee, Hyung Jae ^b   Sota, Takayuki ^c   Chichibu, Shigefusa F ^a,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Chonbuk National University   (South Korea)

^c WASEDA UNIVERSITY   (Japan)

^d RIKEN   (Japan)

Author keywords

Exciton localization; InGaN; Piezoelectric field; Quantum efficiency; Quantum well; Recombination dynamics; Time resolved photoluminescence spectroscopy

Indexed keywords

EXCITONS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS; STIFFNESS; SUPERLATTICES;

COMPOSITIONALLY-GRADED BARRIERS; EXCITON LOCALIZATION; QUANTUM DISKS; RECOMBINATION DYNAMICS; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1642495739     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1369     Document Type: Article

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