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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1970-1973

High quantum efficiency InGaN/GaN structures emitting at 540 nm

(9) Graham, D M a Dawson, P a Godfrey, M J a Kappers, M J b Costa, P M F J b Vickers, M E b Datta, R b Humphreys, C J b Thrush, E J c

a UNIVERSITY OF MANCHESTER (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c Thomas Swan Scientific Equipment Limited (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM WELL STACK; QUANTUM WELL STRUCTURES; ROOM TEMPERATURE; 68.37.LP; 78.55.CR; 78.67.DE; DESIGNING STRUCTURES; HIGH QUANTUM EFFICIENCY; MULTIPLE QUANTUM-WELL STRUCTURES; PHOTOLUMINESCENCE QUANTUM EFFICIENCY; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LIGHT EMISSION; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; OPTICAL PROPERTIES;

SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 33746358835 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565252 Document Type: Conference Paper

Times cited : (14)

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