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Volumn 22, Issue 6, 2007, Pages 663-670

Influence of the surface charge on the operation of ballistic T-branch junctions: A self-consistent model for Monte Carlo simulations

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SIMULATORS; SURFACE CHARGE; TWO DIMENSIONAL;

EID: 34249664356     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/6/014     Document Type: Article
Times cited : (52)

References (21)
  • 1
    • 0000550185 scopus 로고    scopus 로고
    • Nonlinear electron transport in an asymmetric microjunction: A ballistic rectifier
    • Song A M, Lorke A, Kriele A and Kotthaus J P 1998 Nonlinear electron transport in an asymmetric microjunction: a ballistic rectifier Phys. Rev. Lett. 80 3831
    • (1998) Phys. Rev. Lett. , vol.80 , Issue.17 , pp. 3831
    • Song, A.M.1    Lorke, A.2    Kriele, A.3    Kotthaus, J.P.4
  • 2
    • 0035885670 scopus 로고    scopus 로고
    • Operation of InGaAs/InP-based ballistic rectifiers at room temperature and frequencies up to 50 GHz
    • Song A M, Omling P, Samuelson L, Seifert W, Shorubalko I and Zirath H 2001 Operation of InGaAs/InP-based ballistic rectifiers at room temperature and frequencies up to 50 GHz Japan. J. Appl. Phys. 40 L909
    • (2001) Japan. J. Appl. Phys. , vol.40 , Issue.PART 2 , pp. 909
    • Song, A.M.1    Omling, P.2    Samuelson, L.3    Seifert, W.4    Shorubalko, I.5    Zirath, H.6
  • 5
    • 0035851550 scopus 로고    scopus 로고
    • Bias-voltage-induced asymmetry in nanoelectronic Y-branches
    • Worschech L, Xu H Q, Forchel A and Samuelson L 2001 Bias-voltage-induced asymmetry in nanoelectronic Y-branches Appl. Phys. Lett. 79 3287
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.20 , pp. 3287
    • Worschech, L.1    Xu, H.Q.2    Forchel, A.3    Samuelson, L.4
  • 6
    • 0141634015 scopus 로고    scopus 로고
    • Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
    • Song A M, Missous M, Omling P, Peaker A R, Samuelson L and Seifert W 2003 Unidirectional electron flow in a nanometer-scale semiconductor channel: a self-switching device Appl. Phys. Lett. 83 1881
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.9 , pp. 1881
    • Song, A.M.1    Missous, M.2    Omling, P.3    Peaker, A.R.4    Samuelson, L.5    Seifert, W.6
  • 8
    • 20844447126 scopus 로고    scopus 로고
    • Operation and high-frequency performance of nanoscale unipolar rectifying diodes
    • Mateos J, Vasallo B G, Pardo D and Gonzlez T 2005 Operation and high-frequency performance of nanoscale unipolar rectifying diodes Appl. Phys. Lett. 86 212103
    • (2005) Appl. Phys. Lett. , vol.86 , Issue.21 , pp. 212103
    • Mateos, J.1    Vasallo, B.G.2    Pardo, D.3    Gonzlez, T.4
  • 10
    • 0030287489 scopus 로고    scopus 로고
    • Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures
    • Mateos J, Gonzlez T, Pardo D, Tadyszak P, Danneville F and Cappy A 1996 Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures Solid-State Electron. 39 1629
    • (1996) Solid-State Electron. , vol.39 , Issue.11 , pp. 1629
    • Mateos, J.1    Gonzlez, T.2    Pardo, D.3    Tadyszak, P.4    Danneville, F.5    Cappy, A.6
  • 17
    • 0035794337 scopus 로고    scopus 로고
    • Electrical properties of three terminal ballistic junctions
    • Xu H Q 2001 Electrical properties of three terminal ballistic junctions Appl. Phys. Lett. 78 2064
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.14 , pp. 2064
    • Xu, H.Q.1
  • 19
    • 0039138180 scopus 로고    scopus 로고
    • Injection statistics simulator for dynamic analysis of noise in mesoscopic devices
    • Gonzlez T, Mateos J, Pardo D, Varani L and Reggiani L 1999 Injection statistics simulator for dynamic analysis of noise in mesoscopic devices Semicond. Sci. Technol. 14 L37
    • (1999) Semicond. Sci. Technol. , vol.14 , Issue.11 , pp. 37
    • Gonzlez, T.1    Mateos, J.2    Pardo, D.3    Varani, L.4    Reggiani, L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.