Transition from ballistic to ohmic transport in T-Branch Junctions at room temperature in GaInAs/AlInAs heterostructures

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 378-381

  Galloo, J S ^a   Pichonat, E ^a   Roelens, Y ^a   Bollaert, S ^a   Wallart, X ^a   Cappy, A ^a   Mateos, J ^b   Gonzales, T ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA PROCESSING; ELECTRON BEAMS; MONTE CARLO METHODS; OHMIC CONTACTS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

BALLISTIC DEVICES; OHMIC TRANSPORT; T-BRANCH JUNCTIONS; WET ETCHING;

SEMICONDUCTOR JUNCTIONS;

EID: 23744462087     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J. Mateos, B.F. Vasallo,D. Pardo,T. Gonzalez T.,J.S. Galloo,Y. Roelens,S. Bollaert,A Cappy, "Ballistic nanodevices for terahertz data processing: Monte Carlo simulations" Nanotechnology, 14(2003) 117-122
2. H.Q. Xu, "Electrical properties of three-terminal ballistic junctions", Applied Physics Letters, V.78,N°14 (2 april 2001)
3. H.Q. Xu, "A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics", Physica E, 13 (2002) 942-945
4. J. Mateos,B.F. Vasallo,D. Pardo,T. Gonzalez,J.S. Galloo, Bollaert S.,Y. Roelens,A. Cappy, "Microscopic modelling of nonlinear transport in ballistic nanodevices", IEEE Transactions on Electron Devices 50, 1897-1905 (2003)