Ballistic transport and gate control mechanism in deeply etched electron-waveguide based devices

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1115-1119

  Hieke, Katharina ^a   Wesström, Jan Olof ^a   Palm, Thomas ^a   Stålnacke, Björn ^a   Stoltz, Björn ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON GAS; ETCHING; GATES (TRANSISTOR); MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ELECTRON WAVEGUIDES;

WAVEGUIDES;

EID: 0032117768     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00312-2     Document Type: Article

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