Current transport modeling and experimental study of THz room temperature ballistic deflection transistors

Journal of Physics: Conference Series

Volumn 193, Issue , 2009, Pages

  Kaushal, Vikas ^a   Margala, Martin ^a   Yu, Qiaoyan ^b   Ampadu, Paul ^b   Guarino, Gregg ^b   Sobolewski, Roman ^b  

^a University of Massachusetts   (United States)

^b University of Rochester   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 74349121603     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/193/1/012092     Document Type: Conference Paper

References (5)

1. Song A M 2004 Room-temperature ballistic nanodevices Encyclopedia Nanoscience Nanotechnology 9 371-389
2. Bednarz L, et al 2005 Theoretical and experimental characterization of Y-branch nanojunction rectifier up to 94 GHz 2005 Microwave conference vol 1 p 4-8
3. Diduck Q, M Margala, M Feldman 2006 A Terahertz transistor based on geometrical deflection of ballistic current IEEE MTT-S Int. p 345-347
4. Kaushal V, G Guarino, Q Yu, W R Donaldson, P Ampadu, R Sobolewski, M Margala 2009 A Study of Effects of Deflector Position Variation on Leakage Currents in Ballistic Deflection Transistors IEEE NMDC
5. Huo D, Q Yu, P Ampadu 2007 A Ballistic Nanoelectronic device Simulator 2007 IEEE Int. Symp. on Nanoscale Architecture (NANOARCH 2007) p 38-45