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Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

(7) Iiguez De La Torre, I a Gonzalez T a Pardo, D a Gards C b Roelens, Y b Bollaert, S b Mateos, J a

a UNIVERSITY OF SALAMANCA (Spain)

b INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG AND DIGITAL CIRCUITS; CHARGE MODELS; DEVICE PERFORMANCE; EXPERIMENTAL MEASUREMENTS; HORIZONTAL BRANCHES; INALAS/INGAAS; MONTE CARLO SIMULATION; NANO-DEVICES; NONLINEAR BEHAVIOR; NONLINEAR EFFECT; OUTPUT CHARACTERISTICS; PARASITIC CAPACITANCE; REFLECTED POWER; ROOM TEMPERATURE; SELF-CONSISTENT SURFACE; STANDARD EQUIPMENTS; THREE-BRANCH; THREE-TERMINAL JUNCTIONS;

ANALOG CIRCUITS; CARBON NANOTUBES; CHARGED PARTICLES; DIGITAL INTEGRATED CIRCUITS; MONTE CARLO METHODS; SURFACE CHARGE; SURFACE CHEMISTRY;

CUTOFF FREQUENCY;

EID: 67249158291 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3124363 Document Type: Article

Times cited : (16)

References (14)

1
- 0000550185
- 0031-9007,. 10.1103/PhysRevLett.80.3831
- A. M. Song, A. Lorke, A. Kriele, and J. P. Kotthaus, Phys. Rev. Lett. 0031-9007 80, 3831 (1998). 10.1103/PhysRevLett.80.3831
- (1998) Phys. Rev. Lett. , vol.80 , pp. 3831
- Song, A.M.¹ Lorke, A.² Kriele, A.³ Kotthaus, J.P.⁴

2
- 0040752552
- 0003-6951,. 10.1063/1.1396626
- I. Shorubalko, H. Q. Xu, I. Maximov, P. Omling, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 0003-6951 79, 1384 (2001). 10.1063/1.1396626
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1384
- Shorubalko, I.¹ Xu, H.Q.² Maximov, I.³ Omling, P.⁴ Samuelson, L.⁵ Seifert, W.⁶

3
- 22544454781
- 0953-8984,. 10.1088/0953-8984/17/29/R01
- L. Worschech, D. Hartmann, S. Reitzenstein, and A. Forchel, J. Phys.: Condens. Matter 0953-8984 17, R775 (2005). 10.1088/0953-8984/17/29/R01
- (2005) J. Phys.: Condens. Matter , vol.17 , pp. 775
- Worschech, L.¹ Hartmann, D.² Reitzenstein, S.³ Forchel, A.⁴

4
- 44849137062
- 0741-3106,. 10.1109/LED.2008.922983
- J. Sun, D. Wallin, I. Maximov, and H. Q. Xu, IEEE Electron Device Lett. 0741-3106 29, 540 (2008). 10.1109/LED.2008.922983
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 540
- Sun, J.¹ Wallin, D.² Maximov, I.³ Xu, H.Q.⁴

5
- 33847151807
- 0040-6090,. 10.1016/j.tsf.2006.07.178
- S. Bollaert, A. Cappy, Y. Roelens, J. S. Galloo, C. Gard̀s, Z. Teukam, X. Wallart, J. Mateos, T. Gonzalez, B. G. Vasallo, B. Hackens, L. Berdnarz, and I. Huynen, Thin Solid Films 0040-6090 515, 4321 (2007). 10.1016/j.tsf.2006.07.178
- (2007) Thin Solid Films , vol.515 , pp. 4321
- Bollaert, S.¹ Cappy, A.² Roelens, Y.³ Galloo, J.S.⁴ Gard̀s, C.⁵ Teukam, Z.⁶ Wallart, X.⁷ Mateos, J.⁸ Gonzalez, T.⁹ Vasallo, B.G.¹⁰ Hackens, B.¹¹ Berdnarz, L.¹² Huynen, I.¹³

6
- 51849131028
- 0003-6951,. 10.1063/1.2968129
- H. Irie, Q. Diduck, M. Margala, R. Sobolewski, and M. J. Feldman, Appl. Phys. Lett. 0003-6951 93, 053502 (2008). 10.1063/1.2968129
- (2008) Appl. Phys. Lett. , vol.93 , pp. 053502
- Irie, H.¹ Diduck, Q.² Margala, M.³ Sobolewski, R.⁴ Feldman, M.J.⁵

7
- 0037293761
- 0957-4484,. 10.1088/0957-4484/14/2/303
- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy, Nanotechnology 0957-4484 14, 117 (2003). 10.1088/0957-4484/14/2/303
- (2003) Nanotechnology , vol.14 , pp. 117
- Mateos, J.¹ Vasallo, B.G.² Pardo, D.³ González, T.⁴ Galloo, J.S.⁵ Roelens, Y.⁶ Bollaert, S.⁷ Cappy, A.⁸

8
- 0042912823
- 0018-9383,. 10.1109/TED.2003.815858
- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, S. Bollaert, Y. Roelens, and A. Cappy, IEEE Trans. Electron Devices 0018-9383 50, 1897 (2003). 10.1109/TED.2003.815858
- (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1897
- Mateos, J.¹ Vasallo, B.G.² Pardo, D.³ González, T.⁴ Galloo, J.S.⁵ Bollaert, S.⁶ Roelens, Y.⁷ Cappy, A.⁸

9
- 2442464857
- 0741-3106,. 10.1109/LED.2004.826571
- J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens, and A. Cappy, IEEE Electron Device Lett. 0741-3106 25, 235 (2004). 10.1109/LED.2004.826571
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 235
- Mateos, J.¹ Vasallo, B.G.² Pardo, D.³ González, T.⁴ Pichonat, E.⁵ Galloo, J.S.⁶ Bollaert, S.⁷ Roelens, Y.⁸ Cappy, A.⁹

10
- 34249664356
- 0268-1242,. 10.1088/0268-1242/22/6/014
- I. Iiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J. S. Galloo, S. Bollaert, Y. Roelens, and A. Cappy, Semicond. Sci. Technol. 0268-1242 22, 663 (2007). 10.1088/0268-1242/22/6/014
- (2007) Semicond. Sci. Technol. , vol.22 , pp. 663
- Iiguez-De-La-Torre, I.¹ Mateos, J.² González, T.³ Pardo, D.⁴ Galloo, J.S.⁵ Bollaert, S.⁶ Roelens, Y.⁷ Cappy, A.⁸

11
- 0035794337
- 0003-6951,. 10.1063/1.1360229
- H. Q. Xu, Appl. Phys. Lett. 0003-6951 78, 2064 (2001). 10.1063/1.1360229
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2064
- Xu, H.Q.¹

12
- 33748255715
- 0003-6951,. 10.1063/1.2344849
- D. Wallin, I. Shorubalko, H. Q. Xu, and A. Cappy, Appl. Phys. Lett. 0003-6951 89, 092124 (2006). 10.1063/1.2344849
- (2006) Appl. Phys. Lett. , vol.89 , pp. 092124
- Wallin, D.¹ Shorubalko, I.² Xu, H.Q.³ Cappy, A.⁴

13
- 23744462087
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials IPRM, IEEE Catalog 04CH37589.
- J. S. Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, A. Cappy, J. Mateos, and T. González, Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials IPRM, IEEE Catalog 04CH37589, 2004, 378; http://ieeexplore.ieee.org/xpls/abs-all.jsp?isnumber= 30998&arnumber=1442734&count=202&index=101.
- (2004) , pp. 378
- Galloo, J.S.¹ Pichonat, E.² Roelens, Y.³ Bollaert, S.⁴ Wallart, X.⁵ Cappy, A.⁶ Mateos, J.⁷ González, T.⁸

14
- 0030126761
- 0038-1101,. 10.1016/0038-1101(95)00188-3
- T. González and D. Pardo, Solid-State Electron. 0038-1101 39, 555 (1996). 10.1016/0038-1101(95)00188-3
- (1996) Solid-State Electron. , vol.39 , pp. 555
- González, T.¹ Pardo, D.²

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