Ballistic transport at room temperature in deeply etched cross-junctions

Semiconductor Science and Technology

Volumn 15, Issue 3, 2000, Pages 272-276

  Hieke, Katharina ^a   Wesström, Jan Olof ^a   Forsberg, Erik ^a   Carlström, Carl Fredrik ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON GAS; ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

DEEP ETCHING; NANOSCOPIC CROSS-JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0033882925     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/3/309     Document Type: Article

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