A simulator for ballistic nanostructures in a 2-D electron gas

ACM Journal on Emerging Technologies in Computing Systems

Volumn 5, Issue 1, 2009, Pages

  Huo, Dennis ^a   Yu, Qiaoyan ^a   Wolpert, David ^a   Ampadu, Paul ^a,b  

^a UNIVERSITY OF ROCHESTER   (United States)

^b University of Rochester   (United States)

Author keywords

2DEG; Ballistic transport; Nanoelectronic device; Transistor

Indexed keywords

2DEG; BALLISTIC TRANSPORT; CLASSICAL MECHANICS; D ELECTRONS; DESIGN GUIDELINES; LOGIC STRUCTURES; NANOELECTRONIC DEVICE; TRANSISTOR;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRON GAS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MECHANICS; NANOELECTRONICS; NANOSTRUCTURES; SIMULATORS; TRANSISTORS; TRANSPORT PROPERTIES;

BALLISTICS;

EID: 60349093132     PISSN: 15504832     EISSN: 15504840     Source Type: Journal    
DOI: 10.1145/1482613.1482618     Document Type: Article

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