Electronic and optical properties of Al2O3/SiO 2 thin films grown on Si substrate

Journal of Physics D: Applied Physics

Volumn 43, Issue 25, 2010, Pages

  Tahir, Dahlang ^a,b   Kwon, Hyuk Lan ^a   Shin, Hye Chung ^a   Oh, Suhk Kun ^a   Kang, Hee Jae ^a   Heo, Sung ^c   Chung, Jae Gwan ^c   Lee, Jae Cheol ^c   Tougaard, Sven ^d  

^a Chungbuk National University   (South Korea)

^b HASANUDDIN UNIVERSITY   (Indonesia)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ATOMIC LAYER; BAND GAPS; DIELECTRIC FUNCTIONS; DIELECTRIC RESPONSE THEORY; DIELECTRIC THIN FILMS; ENERGY LOSS FUNCTION; IN-BAND; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; RIGOROUS MODEL; SI SUBSTRATES; SI(1 0 0);

ALUMINUM; AMORPHOUS FILMS; ANNEALING; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; DEPOSITION; ELECTRON ENERGY ANALYZERS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ENERGY GAP; PHASE TRANSITIONS; REELS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL PROPERTIES;

EID: 77953550581     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/25/255301     Document Type: Article

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