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Volumn 100, Issue 8, 2006, Pages

Electronic properties of ultrathin Hf O2, Al2 O 3, and Hf-Al-O dielectric films on Si(100) studied by quantitative analysis of reflection electron energy loss spectra

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; HAFNIUM COMPOUNDS; OXYGEN; REFLECTION; SILICON COMPOUNDS; THIN FILM TRANSISTORS;

EID: 33750534221     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360382     Document Type: Article
Times cited : (42)

References (26)
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.