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Volumn 100, Issue 8, 2006, Pages
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Electronic properties of ultrathin Hf O2, Al2 O 3, and Hf-Al-O dielectric films on Si(100) studied by quantitative analysis of reflection electron energy loss spectra
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Author keywords
[No Author keywords available]
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Indexed keywords
DIELECTRIC MATERIALS;
ELECTRON ENERGY LOSS SPECTROSCOPY;
ELECTRON SCATTERING;
ELECTRONIC PROPERTIES;
HAFNIUM COMPOUNDS;
OXYGEN;
REFLECTION;
SILICON COMPOUNDS;
THIN FILM TRANSISTORS;
DIELECTRIC THIN FILMS;
INELASTIC SCATTERING;
METAL OXIDE SEMICONDUCTOR TRANSISTORS;
SIMULATED ENERGY LOSS FUNCTION (ELF);
DIELECTRIC FILMS;
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EID: 33750534221
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2360382 Document Type: Article |
Times cited : (42)
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References (26)
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