Characterization of array CD uniformity with respect to pattern density in 193nm dry photolithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Sipani, Vishal ^a   Kewley, David A ^a   Jain, Kaveri ^a   Byers, Erik R ^a   Daybell, Bruce ^a   Krauth, Anthony ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

193nm; CDU; Chemical flare; Mask transmission; Photolithography

Indexed keywords

DATA STORAGE EQUIPMENT; OPTICAL INSTRUMENTS; PHOTORESISTORS; SURFACE TREATMENT;

193NM; BAKE TEMPERATURES; CD UNIFORMITIES; CDU; CRITICAL DIMENSION UNIFORMITIES; EFFECT OF CHEMICALS; PATTERN DENSITIES; PHOTOACID GENERATORS; RESIST PROCESSING;

PHOTORESISTS;

EID: 57349137702     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.773316     Document Type: Conference Paper

References (4)

1. T. Brunner et al., "A new long range proximity effect in chemically amplified photoresist processes: "chemical flare"," Proc. SPIE, 5753, pp. 261-268, 2005.
2. E. Shiobara et al., "Dependence of resist profile on exposed area ratio," Proc. SPIE, 4345, pp. 628-636, 2001.
3. T. Wallow et al., "Characterization of Photoacid Redeposition in 193mn Photoresists," Proc. SPIE, 6519, 2007.
4. W. Hinsberg, and F.A. Houle, "Numerical Analyses of the Roles of Gas Phase and Liquid Phase UV Photochemistry in Conventional and Immersion 193nm Lithography," Proc SPIE, 6153, 2006.