Quantitative analysis of develop loading effect and its application

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 1, 2004, Pages 213-219

  Han, Hak Seung ^a   Moon, Se Gun ^a   Yoon, Je Bum ^a   Kim, Byung Gook ^a   Moon, Seong Yong ^a   Choi, Seong Woon ^a   Han, Woo Sung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Critical dimension; Develop; Fan process; Fogging; Loading; Puddle

Indexed keywords

ACCELERATION; CHEMICAL ANALYSIS; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; EROSION; ERRORS; MASKS; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SPRAYING;

CRITICAL DIMENSIONS (CD); DEVELOP; FAN PROCESSES; FOGGING; PUDDLE;

LOADING;

EID: 19844371225     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.569199     Document Type: Conference Paper

References (2)

1. H. Sakurai, M. Itho, Y. Esaki, K. Ooishi, K. Sakamoto, M. Nakao, T. Nishimura, H. Miyashita, N. Hayashi, "Performance of Proximity Gap Suction Development (PGSD)", SPIE Vol. 4889, pp.737-745, 2002
2. D. Courboin, J.W.Choi, S.H. Jung, S.H. Baek, L.J. Kim, C.N. Ahn, H.S. Kim, "Investigations on microloading effect : A parallel approach to PGSD(Proximity Gap Suction Development)", SPIE Vol. 5446, pp. 106-117, 2004