A new long range proximity effect in chemically amplified photoresist processes: "chemical flare"

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue I, 2005, Pages 261-268

  Brunner, T ^a   Chen, Z ^a   Chen, K ^a   Scheer, S ^a  

^a IBM   (United States)

Author keywords

CD control; Chemically amplified resist; Flare; High NA imagery; High resolution lithography; Linewidth control; Linewidth uniformity; Lithography; Microlithography; Process control; Proximity effects

Indexed keywords

CD CONTROL; CHEMICALLY AMPLIFIED RESISTS; FLARES; HIGH NA IMAGERY; HIGH RESOLUTION LITHOGRAPHY; LINEWIDTH CONTROL; LINEWIDTH UNIFORMITY; PROXIMITY EFFECTS;

COATING TECHNIQUES; DISTANCE MEASUREMENT; DOSIMETRY; LITHOGRAPHY; PROCESS CONTROL; SCREENING;

PHOTORESISTS;

EID: 24644462179     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.598822     Document Type: Conference Paper

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