Investigation of the develop process for high precision patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7379, Issue , 2009, Pages

  Watanabe, Junichi ^a   Yamazaki, Tsukasa ^a   Tanabe, Masahito ^a   Komizo, Toru ^b   Zweber, Amy E ^c   Smith, Adam C ^c  

^a TOPPAN PRINTING CO LTD   (Japan)

^b Toppan Photomasks Inc   (United States)

^c IBM   (United States)

Author keywords

Develop; Develop loading effect; Pattern collapse; Resolution; SRAF

Indexed keywords

DEVELOP; DEVELOP LOADING EFFECT; PATTERN COLLAPSE; RESOLUTION; SRAF;

PHOTOMASKS; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE; TECHNOLOGICAL FORECASTING;

LITHOGRAPHY;

EID: 69949171909     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.824252     Document Type: Conference Paper

References (1)

1. Tae-Joong Ha, et al, "Improvement of Develop Loading Effect in FEP-171 Process" Proc. of SPIE Vol.5446.